HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features:
TRENCHSTOPTMtechnologyoffering
?verylowVCEsat
?lowEMI
?Verysoft,fastrecoveryanti-paralleldiode
?maximumjunctiontemperature175°C
?qualifiedaccordingtoJEDECfortargetapplications
?Pb-freeleadplating;RoHScompliant
?completeproductspectrumandPSpiceModels:
Applications:
?uninterruptiblepowersupplies
?weldingconverters
?converterswithhighswitchingfrequency
KeyPerformanceandPackageParametersT
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC 80.0
40.0A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
TurnoffsafeoperatingareaVCE ≤1200V,Tvj ≤175°C - 160.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF 40.0
20.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC ≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
10
μs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot
483.0
220.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.
